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                   DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFG35
  NPN 4 GHz wideband transistor
Product specification                        1999 Aug 24
Supersedes data of 1995 Sep 12
Philips Semiconductors                                                                                     Product specification


     NPN 4 GHz wideband transistor                                                                                   BFG35

DESCRIPTION                                PINNING
NPN planar epitaxial transistor                PIN          DESCRIPTION                page                            4
mounted in a plastic SOT223
                                           1         emitter
envelope, intended for wideband
amplifier applications. It features high   2         base
output voltage capabilities.               3         emitter
                                           4         collector



                                                                                                      1          2          3
                                                                                                Top view               MSB002 - 1



                                                                                                     Fig.1 SOT223.


QUICK REFERENCE DATA

 SYMBOL                PARAMETER                               CONDITIONS                     MIN.    TYP.       MAX.       UNIT
VCEO         collector-emitter voltage           open base                                -          -          18         V
IC           DC collector current                                                         -          -          150        mA
Ptot         total power dissipation             up to Ts = 135 

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