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bfq68_cnv_2


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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFQ68
  NPN 4 GHz wideband transistor
Product specification                         September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors                                                                              Product specification


     NPN 4 GHz wideband transistor                                                                             BFQ68

DESCRIPTION                                 PINNING
NPN transistor mounted in a four-lead        PIN           DESCRIPTION
dual-emitter SOT122A envelope with
                                              1       collector
a ceramic cap. All leads are isolated                                              fpage               4
from the stud. Diffused                       2       emitter
emitter-ballasting resistors and the          3       base                                     1                  3
application of gold sandwich                  4       emitter
metallization ensure an optimum
temperature profile and excellent
reliability properties. It features very                                                                   2
high output voltage capabilities.                                                              Top view        MBK187

It is primarily intended for final stages
in MATV system amplifiers, and is
also suitable for use in low power                                                             Fig.1 SOT122A.
band IV and V equipment.


QUICK REFERENCE DATA

 SYMBOL                     PARAMETER                                 CONDITIONS                    TYP.   MAX.         UNIT
VCEO          collector-emitter voltage                  open base                                 -       18           V
IC            collector current                                                                    -       300          mA
Ptot          total power dissipation                    up to Tc = 110



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