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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFQ136
  NPN 4 GHz wideband transistor
Product specification                         September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors                                                                              Product specification


     NPN 4 GHz wideband transistor                                                                          BFQ136

DESCRIPTION                                 PINNING
NPN transistor in a four-lead                PIN           DESCRIPTION
dual-emitter SOT122A envelope with                                                 page              4
                                              1       collector
a ceramic cap. All leads are isolated
from the stud. Diffused                       2       emitter                                  1                   3
emitter-ballasting resistors and the          3       base
application of gold sandwich                  4       emitter
metallization ensure an optimum
temperature profile and excellent                                                                           2
reliability properties. It features
                                                                                               Top view         MBK187
extremely high output voltage
capabilities.
                                                                                               Fig.1 SOT122A.
It is primarily intended for final stages
in UHF amplifiers.


QUICK REFERENCE DATA

 SYMBOL                     PARAMETER                                 CONDITIONS                     TYP.       MAX.     UNIT
VCEO          collector-emitter voltage                  open base                                 -        18           V
IC            DC collector current                                                                 -        600          mA
Ptot          total power dissipation                    up to Tc = 100



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