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bfq17_cnv_2


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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFQ17
  NPN 1 GHz wideband transistor
Product specification                         September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors                                                                               Product specification


     NPN 1 GHz wideband transistor                                                                                 BFQ17

DESCRIPTION                               PINNING
NPN transistor in a SOT89 plastic            PIN            DESCRIPTION
envelope intended for application in
                                                         Code: FA
thick and thin-film circuits. The
                                              1      emitter                        page
transistor has extremely good
intermodulation properties and a high         2      collector
power gain.                                   3      base

                                                                                                     1         2        3

                                                                                                 Bottom view       MBK514




                                                                                                  Fig.1 SOT89.


QUICK REFERENCE DATA

 SYMBOL                    PARAMETER                                    CONDITIONS                       TYP. MAX. UNIT
VCBO         collector-base voltage                         open emitter                                 -         40       V
VCEO         collector-emitter voltage                      open base                                    -         25       V
ICM          peak collector current                                                                      -         300      mA
Ptot         total power dissipation                        up to Ts = 145



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