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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFQ18A
  NPN 4 GHz wideband transistor
Product specification                         September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors                                                                              Product specification


     NPN 4 GHz wideband transistor                                                                                BFQ18A

DESCRIPTION                               PINNING
NPN transistor in a plastic SOT89            PIN            DESCRIPTION
envelope intended for application in
                                                         Code: FF
thick and thin-film circuits. It is
                                              1      emitter                        page
primarily intended for MATV
purposes.                                     2      collector
                                              3      base

                                                                                                    1         2        3

                                                                                               Bottom view         MBK514




                                                                                                Fig.1 SOT89.


QUICK REFERENCE DATA

 SYMBOL                     PARAMETER                                   CONDITIONS                      TYP. MAX. UNIT
VCBO         collector-base voltage                         open emitter                                -         25        V
VCEO         collector-emitter voltage                      open base                                   -         18        V
IC           DC collector current                                                                       -         150       mA
Ptot         total power dissipation                        up to Ts = 155



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