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bfq19_cnv_2


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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFQ19
  NPN 5 GHz wideband transistor
Product specification                         September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors                                                                            Product specification


     NPN 5 GHz wideband transistor                                                                            BFQ19

DESCRIPTION                               PINNING
NPN transistor in a SOT89 plastic           PIN         DESCRIPTION
envelope intended for application in
                                                      Code: FB
thick and thin-film circuits. It is
primarily intended for use in UHF and         1     emitter                        page

microwave amplifiers such as in aerial        2     collector
amplifiers, radar systems,                    3     base
oscilloscopes, spectrum analyzers
etc.
                                                                                                  1       2     3
The transistor features very low                                                            Bottom view       MBK514
intermodulation distortion and high
power gain. Due to its very high
transition frequency, it also has
excellent wideband properties and                                                               Fig.1 SOT89.
low noise up to high frequencies.


QUICK REFERENCE DATA

 SYMBOL                  PARAMETER                                  CONDITIONS                  TYP.      MAX.          UNIT
VCEO          collector-emitter voltage              open base                              -          15              V
IC            DC collector current                                                          -          100             mA
Ptot          total power dissipation                up to Ts = 145



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