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                   DISCRETE SEMICONDUCTORS




  DATA SHEET



                     M3D173




  BFR505T
  NPN 9 GHz wideband transistor
Product specification                        2000 May 17
Supersedes data of 2000 Mar 14
NXP Semiconductors                                                                                         Product specification


     NPN 9 GHz wideband transistor                                                                              BFR505T

FEATURES                                  DESCRIPTION
 Low current consumption                  NPN transistor in a plastic SOT416
 High power gain                          (SC-75) package.                                                     3
                                                                                 lfpage

 Low noise figure
 High transition frequency                PINNING

 Gold metallization ensures                 PIN            DESCRIPTION                             1                    2
 excellent reliability                        1     base                                         Top view             MBK090

 SOT416 (SC-75) package.                      2     emitter
                                              3     collector
APPLICATIONS                                                                              Marking code: N0.

Low power amplifiers, oscillators and                                                              Fig.1 SOT416.
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.

QUICK REFERENCE DATA

 SYMBOL                 PARAMETER                               CONDITIONS                  MIN.       TYP.        MAX.        UNIT
VCBO          collector-base voltage              open emitter                                                     20          V
VCES          collector-emitter voltage           RBE = 0                                                          15          V
IC            DC collector current                                                                                 18          mA
Ptot          total power dissipation             Ts  75 C; note 1                                                 150         mW
hFE           DC current gain                     IC = 5 mA; VCE = 6 V; Tj = 25 C         60           120         250
fT            transition frequency                IC = 5 mA; VCE = 6 V; f = 1 GHz;                     9                       GHz
                                                  Tamb = 25 C
GUM           maximum unilateral power gain       IC = 5 mA; VCE = 6 V; f = 900 MHz;                   17                      dB
                                                  Tamb = 25 C
F             noise figure                        IC = 1.25 mA; VCE = 6 V;                             1.2         1.7         dB
                                                  f = 900 MHz; Tamb = 25 C


LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
 SYMBOL                 PARAMETER                                   CONDITIONS                         MIN.        MAX.        UNIT
VCBO          collector-base voltage              open emitter                                                     20          V
VCE           collector-emitter voltage           RBE = 0                                                          15          V
VEBO          emitter-base voltage                open collector                                                   2.5         V
IC            DC collector current                                                                                 18          mA
Ptot          total power dissipation             Ts  75 C; note 1                                                 150         mW
Tstg          storage temperature                                                                      65          +150        C
Tj            junction temperature                                                                                 150         C

Note
1. Ts is the temperature at the soldering point of the collector pin.


2000 May 17                                                     2
NXP Semiconductors                                                           Product specification


  NPN 9 GHz wideband transistor                                                    BFR505T

THERMAL RESISTANCE

   SYMBOL                                                  PARAMETER        VALUE       UNIT
Rth j-s               thermal resistance from junction to soldering point    500         K/W




                                                  MGU068
          200

     Ptot
    (mW)

          150




          100




           50




            0
                0      50       100       150             200
                                                Ts (

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