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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR520T
NPN 9 GHz wideband transistor
Product specification 2000 Apr 03
Supersedes data of 1999 Nov 02
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
FEATURES DESCRIPTION
High power gain Silicon NPN transistor encapsulated
Low noise figure in a plastic SOT416 (SC-75) package. 3
lfpage
High transition frequency
Gold metallization ensures PINNING
excellent reliability PIN DESCRIPTION 1 2
SOT416 (SC-75) package. 1 base Top view MBK090
2 emitter
APPLICATIONS 3 collector Marking code: N2.
Wideband applications such as
satellite TV tuners, cellular phones,
Fig.1 SOT416.
cordless phones, pagers etc., with
signal frequencies up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE = 0 15 V
IC DC collector current 70 mA
Ptot total power dissipation up to Ts = 75 C; note 1 150 mW
hFE DC current gain IC = 20 mA; VCE = 6 V; Tj = 25 C 60 120 250
fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; 9 GHz
Tamb = 25 C
GUM maximum unilateral power IC = 20 mA; VCE = 6 V; f = 900 MHz; 15 dB
gain Tamb = 25 C
F noise figure IC = 5 mA; VCE = 6 V; f = 900 MHz; 1.1 1.6 dB
Tamb = 25 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE = 0 15 V
VEBO emitter-base voltage open collector 2.5 V
IC DC collector current 70 mA
Ptot total power dissipation up to Ts = 75 C; note 1 150 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
2000 Apr 03 2
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 500 K/W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCE = 6 V 50 nA
hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 1 pF
Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz 0.5 pF
Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz 0.4 pF
fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; 9 GHz
Tamb = 25 C
GUM maximum unilateral power IC = 20 mA; VCE = 6 V; f = 900 MHz; 15 dB
gain; note 1 Tamb = 25 C
IC = 20 mA; VCE = 6 V; f = 2 GHz; 9 dB
Tamb = 25 C
s212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; 13 14 dB
Tamb = 25 C
F noise figure s = opt; IC = 5 mA; VCE = 6 V; 1.1 1.6 dB
f = 900 MHz; Tamb = 25 C
s = opt; IC = 20 mA; VCE = 6 V; 1.6 2.1 dB
f = 900 MHz; Tamb = 25 C
s = opt; IC = 5 mA; VCE = 6 V; 1.9 dB
f = 2 GHz; Tamb = 25 C
PL1 output power at 1 dB gain IC = 20 mA; VCE = 6 V; RL = 50 ; 17 dBm
compression f = 900 MHz; Tamb = 25 C
ITO third order intercept point note 2 26 dBm
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2
s 21
G UM = 10 log ------------------------------------------------------- dB
2 2
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