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DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93AW
NPN 5 GHz wideband transistor
Product specification 1995 Sep 18
Supersedes data of November 1992
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
FEATURES DESCRIPTION
3
High power gain Silicon NPN transistor encapsulated handbook, 2 columns
Gold metallization ensures in a plastic SOT323 (S-mini) package.
excellent reliability The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
SOT323 (S-mini) package.
PINNING
APPLICATIONS 1 2
PIN DESCRIPTION
It is designed for use in RF amplifiers, Top view MBC870
mixers and oscillators with signal 1 base Marking code: R2.
frequencies up to 1 GHz. 2 emitter
Fig.1 SOT323
3 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
IC collector current (DC) 35 mA
Ptot total power dissipation up to Ts = 93 C; note 1 300 mW
hFE DC current gain IC = 30 mA; VCE = 5 V 40 90
Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz; 0.6 pF
Tamb = 25 C
fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4 5 GHz
GUM maximum unilateral power IC = 30 mA; VCE = 8 V; f = 1 GHz; 13 dB
gain Tamb = 25 C
IC = 30 mA; VCE = 8 V; f = 2 GHz; 8 dB
Tamb = 25 C
F noise figure IC = 5 mA; VCE = 8 V; f = 1 GHz; 1.5 dB
s = opt
Tj junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 18 2
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITION MIN. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
VEBO emitter-base voltage open collector 2 V
IC collector current (DC) 35 mA
Ptot total power dissipation up to Ts = 93 C; see Fig.2; note 1 300 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITION VALUE UNIT
Rth j-s thermal resistance from junction to up to Ts = 93 C; note 1 190 K/W
soldering point
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
MLB540
400
P tot
(mW)
300
200
100
0
0 50 100 150 200
T s ( o C)
Fig.2 Power derating curve.
1995 Sep 18 3
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector leakage current IE = 0; VCB = 5 V 50 nA
hFE DC current gain IC = 30 mA; VCE = 5 V 40 90
Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz 0.7 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; 2.3 pF
f = 1 MHz
Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz 0.6 pF
fT transition frequency IC = 30 mA; VCE = 5 V; 4 5 GHz
f = 500 MHz
GUM maximum unilateral power IC = 30 mA; VCE = 8 V; 13 dB
gain; note 1 f = 1 GHz; Tamb = 25 C
IC = 30 mA; VCE = 8 V; 8 dB
f = 2 GHz; Tamb = 25 C
F noise figure IC = 5 mA; VCE = 8 V; 1.5 dB
f = 1 GHz; s = opt
IC = 5 mA; VCE = 8 V; 2.1 dB
f = 2 GHz; s = opt
Note
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -------------------------------------------------------- dB.
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