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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFR92
  NPN 5 GHz wideband transistor
Product specification                         September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors                                                                                 Product specification


     NPN 5 GHz wideband transistor                                                                                BFR92

DESCRIPTION                               PINNING
NPN transistor in a plastic SOT23           PIN         DESCRIPTION
envelope primarily intended for use in
                                                      Code: P1p                   fpage                     3
RF wideband amplifiers and
oscillators. The transistor features          1     base
low intermodulation distortion and            2     emitter
high power gain; due to its very high         3     collector
transition frequency, it also has                                                              1                    2
excellent wideband properties and                                                             Top view          MSB003
low noise up to high frequencies.
PNP complement is BFT92.
                                                                                                   Fig.1 SOT23.


QUICK REFERENCE DATA

  SYMBOL                   PARAMETER                                CONDITIONS                      TYP.     MAX.        UNIT
VCBO          collector-base voltage                   open emitter                                -        20           V
VCEO          collector-emitter voltage                open base                                   -        15           V
IC            DC collector current                                                                 -        25           mA
Ptot          total power dissipation                  up to Ts = 95 

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