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DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106
NPN 5 GHz wideband transistor
Product specification September 1995
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR106
DESCRIPTION PINNING
NPN silicon planar epitaxial transistor PIN DESCRIPTION
in a plastic SOT23 envelope. It is lfpage 3
Code: R7p
primarily intended for low noise,
general RF applications. 1 base
2 emitter
3 collector 1 2
Top view MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
IC DC collector current 100 mA
Ptot total power dissipation up to Ts = 70 C; note 1 500 mW
hFE DC current gain IC = 50 mA; VCE = 9 V; Tamb = 25 C 25 80
fT transition frequency IC = 50 mA; VCE = 9 V; f = 500 MHz; 5 GHz
Tamb = 25 C
GUM maximum unilateral power gain IC = 30 mA; VCE = 6 V; f = 800 MHz; 11.5 dB
Tamb = 25 C
Vo output voltage IC = 50 mA; VCE = 9 V; RL = 75 ; 350 mV
Tamb = 25 C; dim = 60 dB;
f(pqr) = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 3 V
IC DC collector current 100 mA
Ptot total power dissipation up to Ts = 70 C; note 1 500 mW
Tstg storage temperature 65 150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995 2
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR106
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to up to Ts = 70 C; note 1 210 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 10 V 100 nA
hFE DC current gain IC = 50 mA; VCE = 9 V 25 80
fT transition frequency IC = 50 mA; VCE = 9 V; f = 500 MHz; 5 GHz
Tamb = 25 C
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 1.5 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 4.5 pF
Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz 1.2 pF
GUM maximum unilateral power gain IC = 30 mA; VCE = 6 V; f = 800 MHz; 11.5 dB
(note 1) Tamb = 25 C
F noise figure IC = 30 mA; VCE = 6 V; f = 800 MHz; 3.5 dB
Tamb = 25 C
d2 second order intermodulation note 2 50 dB
distortion
Vo output voltage note 3 350 mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log --------------------------------------------------------- dB.
2 2
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