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DISCRETE SEMICONDUCTORS
DATA SHEET
BFS520
NPN 9 GHz wideband transistor
Product specification September 1995
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS520
FEATURES It is intended for wideband
applications such as satellite TV
High power gain
tuners, cellular phones, cordless
Low noise figure phones, pagers etc., with signal handbook, 2 columns 3
High transition frequency frequencies up to 2 GHz.
Gold metallization ensures
excellent reliability PINNING
SOT323 envelope.
PIN DESCRIPTION
1 2
Code: N2
DESCRIPTION Top view MBC870
1 base
NPN transistor in a plastic SOT323 2 emitter
envelope. Fig.1 SOT323.
3 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE = 0 15 V
IC DC collector current 70 mA
Ptot total power dissipation up to Ts = 118 C; note 1 300 mW
hFE DC current gain IC = 20 mA; VCE = 6 V; Tj = 25 C 60 120 250
fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; 9 GHz
Tamb = 25 C
GUM maximum unilateral power gain Ic = 20 mA; VCE = 6 V; f = 900 MHz; 15 dB
Tamb = 25 C
F noise figure Ic = 5 mA; VCE = 6 V; f = 900 MHz; 1.1 1.6 dB
Tamb = 25 C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE = 0 15 V
VEBO emitter-base voltage open collector 2.5 V
IC DC collector current 70 mA
Ptot total power dissipation up to Ts = 118 C; note 1 300 mW
Tstg storage temperature 65 150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995 2
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS520
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to up to Ts = 118 C; note 1 190 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C, unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCE = 6 V 50 nA
hFE DC current gain IC = 20mA; VCE = 6 V 60 120 250
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 1 pF
Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz 0.5 pF
Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz 0.4 pF
fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; 9 GHz
Tamb = 25 C
GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; 15 dB
(note 1) Tamb = 25 C
IC = 20 mA; VCE = 6 V; f = 2 GHz; 9 dB
Tamb = 25 C
S212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; 13 14 dB
Tamb = 25 C
F noise figure s = opt; IC = 5 mA; VCE = 6 V; 1.1 1.6 dB
f = 900 MHz; Tamb = 25 C
s = opt; IC = 20 mA; VCE = 6 V; 1.6 2.1 dB
f = 900 MHz; Tamb = 25 C
s = opt; IC = 5 mA; VCE = 6 V; 1.9 dB
f = 2 GHz; Tamb = 25 C
PL1 output power at 1 dB gain Ic = 20 mA; VCE = 6 V; RL = 50 ; 17 dBm
compression f = 900 MHz; Tamb = 25 C
ITO third order intercept point note 2 26 dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log --------------------------------------------------------- dB.
2 2
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