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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BFS540
NPN 9 GHz wideband transistor
Product specification 2000 May 30
Supersedes data of 1997 Dec 05
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS540
FEATURES DESCRIPTION
High power gain NPN transistor in a SOT323 plastic
Low noise figure package.
handbook, 2 columns 3
High transition frequency
Gold metallization ensures PINNING
excellent reliability PIN DESCRIPTION
SOT323 package. 1 base 1 2
2 emitter Top view MBC870
APPLICATIONS 3 collector
RF wideband amplifier applications Marking code: N4.
such as satellite TV systems and RF
portable communication equipment Fig.1 SOT323.
with signal frequencies up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
IC DC collector current 120 mA
Ptot total power dissipation Ts 80 C; note 1 500 mW
hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 C 100 120 250
fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; 9 GHz
Tamb = 25 C
GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; 14 dB
Tamb = 25 C
F noise figure IC = 10 mA; VCE = 8 V; f = 900 MHz; 1.3 1.7 dB
Tamb = 25 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE = 0 15 V
VEBO emitter-base voltage open collector 2.5 V
IC DC collector current 120 mA
Ptot total power dissipation Ts 80 C; note 1 500 mW
Tstg storage temperature 65 150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
2000 May 30 2
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS540
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts 80 C; note 1 190 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCE = 8 V 50 nA
hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 2 pF
Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz 0.9 pF
Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz 0.6 pF
fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; 9 GHz
Tamb = 25 C
GUM maximum unilateral power IC = 40 mA; VCE = 8 V; f = 900 MHz; 14 dB
gain (note 1) Tamb = 25 C
IC = 40 mA; VCE = 8 V; f = 2 GHz; 8 dB
Tamb = 25 C
s212 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; 12 13 dB
Tamb = 25 C
F noise figure s = opt; IC = 10 mA; VCE = 8 V; 1.3 1.8 dB
f = 900 MHz; Tamb = 25 C
s = opt; IC = 40 mA; VCE = 8 V; 1.9 2.4 dB
f = 900 MHz; Tamb = 25 C
s = opt; IC = 10 mA; VCE = 8 V; 2.1 dB
f = 2 GHz; Tamb = 25 C
PL1 output power at 1 dB gain Ic = 40 mA; VCE = 8 V; RL = 50 ; 21 dBm
compression f = 900 MHz; Tamb = 25 C
ITO third order intercept point note 2 34 dBm
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2
s 21
G UM = 10 log ------------------------------------------------------- dB.
2 2
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