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DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17A
NPN 3 GHz wideband transistor
Product specification September1995
NXP Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
DESCRIPTION
NPN transistor in a plastic SOT23 package.
handbook, halfpage 3
APPLICATIONS
It is intended for RF applications such as oscillators
in TV tuners.
1 2
PINNING Top view MSB003
PIN DESCRIPTION
1 base Marking code: E2p.
2 emitter
Fig.1 SOT23.
3 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter 25 V
VCEO collector-emitter voltage open base 15 V
IC DC collector current 25 mA
Ptot total power dissipation up to Ts = 70 C; note 1 300 mW
fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; 2.8 GHz
Tamb = 25 C
GUM maximum unilateral power gain IC = 14 mA; VCE = 10 V; f = 800 MHz 13.5 dB
F noise figure IC = 2 mA; VCE = 5 V; f = 800 MHz; 2.5 dB
Tamb = 25 C
VO output voltage dim = 60 dB; IC = 14 mA; VCE = 10 V; 150 mV
RL = 75 ; Tamb = 25 C;
f(p+qr) = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 25 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2.5 V
IC DC collector current 25 mA
ICM peak collector current 50 mA
Ptot total power dissipation up to Ts = 70 C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C
Note to the Quick reference data and the Limiting values
1. Ts is the temperature at the soldering point of the collector pin.
September1995 2
NXP Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point up to Ts = 70 C; note 1 260 K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 10 V 50 nA
hFE DC current gain IC = 2 mA; VCE = 1 V; Tamb = 25 C 25 90
IC = 25 mA; VCE = 1 V; Tamb = 25 C 25 90
fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; 2.8 GHz
Tamb = 25 C
Cc collector capacitance IE = 0; VCB = 10 V; f = 1 MHz; 0.7 pF
Tamb = 25 C
Ce emitter capacitance IC = 0; VEB = 0.5 V; f = 1 MHz 1.25 pF
Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz 0.6 pF
GUM maximum unilateral power gain IC = 14 mA; VCE = 10 V; f = 800 MHz 13.5 dB
note 1
F noise figure IC = 2 mA; VCE = 5 V; ZS = 60 ; 2.5 dB
f = 800 MHz; Tamb = 25 C
VO output voltage note 2 150 mV
Notes
2
S 21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log --------------------------------------------------------- dB.
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2 2
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