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>> Download bfs17w_2 documenatation <<Text preview - extract from the document DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17W
NPN 1 GHz wideband transistor
Product specification 1995 Sep 04
Supersedes data of November 1992
File under discrete semiconductors, SC14
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
APPLICATIONS PINNING
handbook, 2 columns
Primarily intended as a mixer, 3
PIN DESCRIPTION
oscillator and IF amplifier in UHF and
1 base
VHF tuners.
2 emitter
3 collector
DESCRIPTION
Silicon NPN transistor in a plastic 1 2
SOT323 (S-mini) package. The
Top view MBC870
BFS17W uses the same crystal as
the SOT23 version, BFS17. Marking code: E1
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage - - 25 V
VCEO collector-emitter voltage - - 15 V
IC DC collector current - - 50 mA
Ptot total power dissipation up to Ts = 118
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