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DISCRETE SEMICONDUCTORS
DATA SHEET
BFT46
N-channel silicon FET
Product specification December 1997
NXP Semiconductors Product specification
N-channel silicon FET BFT46
DESCRIPTION
Symmetrical n-channel silicon
epitaxial planar junction field-effect
transistor in a microminiature plastic
envelope. The transistor is intended
for low level general purpose
handbook, halfpage 3
amplifiers in thick and thin-film
circuits. d
g
s
PINNING
1 2
1 = drain Top view MAM385
2 = source
3 = gate
Note : Drain and source are Fig.1 Simplified outline and symbol, SOT23.
interchangeable.
Marking code
BFT46 = M3p
QUICK REFERENCE DATA
Drain-source voltage VDS max. 25 V
Gate-source voltage (open drain) VGSO max. 25 V
Total power dissipation up to Tamb = 40 C Ptot max. 250 mW
Drain current
VDS = 10 V; VGS = 0 0,2 mA
IDSS
1,5 mA
Transfer admittance (common source)
ID = 0,2 mA; VDS = 10 V; f = 1 kHz yfs 0,5 mS
Equivalent noise voltage
VDS = 10 V; ID = 200 A; B = 0,6 to 100 Hz Vn 0,5 V
December 1997 2
NXP Semiconductors Product specification
N-channel silicon FET BFT46
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage VDS max. 25 V
Drain-gate voltage (open source) VDGO max. 25 V
Gate-source voltage (open drain) VGSO max. 25 V
Drain current ID max. 10 mA
Gate current IG max. 5 mA
Total power dissipation up to Tamb = 40 C(1) Ptot max. 250 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tj max. 150 C
THERMAL RESISTANCE
From junction to ambient(1) Rth j-a = 430 K/W
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.
CHARACTERISTICS
Tj = 25 C unless otherwise specified
Gate cut-off current
VGS = 10 V; VDS = 0 IGSS 0,2 nA
Drain current
VDS = 10 V; VGS = 0 0,2 mA
IDSS
1,5 mA
Gate-source voltage
ID = 50 A; VDS = 10 V 0,1 V
VGS
1,0 V
Gate-source cut-off voltage
ID = 0,5 nA; VDS = 10 V V(P)GS 1,2 V
y-parameters at f = 1 kHz;
VDS = 10 V; VGS = 0; Tamb = 25 C
Transfer admittance yfs 1,0 mS
Output admittance yos 10 S
VDS = 10 V; ID = 200 A; Tamb = 25 C
Transfer admittance yfs 0,5 mS
Output admittance yos 5 S
Input capacitance at f = 1 MHz;
VDS = 10 V; VGS = 0; Tamb = 25 C Cis 5 pF
Feedback capacitance at f = 1 MHz;
VDS = 10 V; VGS = 0; Tamb = 25 C Crs 1,5 pF
Equivalent noise voltage
VDS = 10 V; ID = 200 A; Tamb = 25 C
B = 0,6 to 100 Hz Vn 0,5 V
December 1997 3
NXP Semiconductors Product specification
N-channel silicon FET BFT46
MDA245
300
handbook, halfpage
Ptot
(mW)
200
100
0
0 40 80 120 160 200
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