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DISCRETE SEMICONDUCTORS
DATA SHEET
BFT93
PNP 5 GHz wideband transistor
Product specification November 1992
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT93
DESCRIPTION PINNING
PNP transistor in a plastic SOT23 PIN DESCRIPTION
envelope.
Code: X1p
It is primarily intended for use in RF 1 base
wideband amplifiers, such as in aerial lfpage 3
2 emitter
amplifiers, radar systems,
oscilloscopes, spectrum analyzers, 3 collector
etc. The transistor features low
intermodulation distortion and high
1 2
power gain; due to its very high
transition frequency, it also has Top view MSB003
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR93 and Fig.1 SOT23.
BFR93A.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
Ic DC collector current 35 mA
Ptot total power dissipation up to Ts = 95 C; note 1 300 mW
fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz; 5 GHz
Tj = 25 C
Cre feedback capacitance IC = 2 mA; VCE = 5 V; f = 1 MHz 1 pF
GUM maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 500 MHz; 16.5 dB
Tamb = 25 C
F noise figure IC = 10 mA; VCE = 5 V; f = 500 MHz; 2.4 dB
Tamb = 25 C
Vo output voltage dim = 60 dB; IC = 30 mA; 300 mV
VCE = 5 V; RL = 75 ;
f(pqr) = 493.25 MHz
Note
1. Ts is the temperature at the soldering point of the collector tab.
November 1992 2
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT93
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
VEBO emitter-base voltage open collector 2 V
IC DC collector current 35 mA
ICM peak collector current f 1 MHz 50 mA
Ptot total power dissipation up to Ts = 95 C; note 1 300 mW
Tstg storage temperature 65 150 C
Tj junction temperature 175 C
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to up to Ts = 70 C; (note 1) 260 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
November 1992 3
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT93
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 5 V 50 nA
hFE DC current gain IC = 30 mA; VCE = 5 V 20 50
fT transition frequency IC = 30 mA; VCE = 5 V; 5 GHz
f = 500 MHz
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 0.95 pF
Ce emitter capacitance Ic = ic = 0; VEB = 0.5 V; f = 1 MHz 1.8 pF
Cre feedback capacitance IC = 2 mA; VCE = 5 V; f = 1 MHz 1 pF
GUM maximum unilateral power gain IC = 30 mA; VCE = 5 V; 16.5 dB
(note 1) f = 500 MHz; Tamb = 25 C
F noise figure IC = 10 mA; VCE = 5 V; 2.4 dB
f = 500 MHz; Tamb = 25 C
Vo output voltage see Fig.2 and note 2 300 mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log --------------------------------------------------------- dB.
2 2
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