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DISCRETE SEMICONDUCTORS
DATA SHEET
BFT93W
PNP 4 GHz wideband transistor
Product specification March 1994
Supersedes data of November 1992
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT93W
FEATURES DESCRIPTION
High power gain Silicon PNP transistor in a plastic, 3
handbook, 2 columns
Gold metallization ensures SOT323 (S-mini) package. The
excellent reliability BFT93W uses the same crystal as the
SOT23 version, BFT93.
SOT323 (S-mini) package.
1 2
PINNING
APPLICATIONS Top view MBC870
PIN DESCRIPTION
It is intended as a general purpose
transistor for wideband applications 1 base BFT93W Marking code: X1.
up to 2 GHz. 2 emitter
3 collector Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
IC collector current (DC) 50 mA
Ptot total power dissipation up to Ts = 93 C; note 1 300 mW
hFE DC current gain IC = 30 mA; VCE = 5 V 20 50
Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz 1 pF
fT transition frequency IC = 30 mA; VCE = 5 V; 4 GHz
f = 500 MHz
GUM maximum unilateral power gain IC = 30 mA; VCE = 5 V; 15.5 dB
f = 500 MHz; Tamb = 25 C
F noise figure IC = 10 mA; VCE = 5 V; 2.4 dB
f = 500 MHz
Tj junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the collector pin.
March 1994 2
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT93W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
VEBO emitter-base voltage open collector 2 V
IC collector current (DC) 50 mA
Ptot total power dissipation up to Ts = 93 C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point up to Ts = 93 C; note 1 190 K/W
Note to the "Limiting values" and "Thermal characteristics"
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 5 V 50 nA
hFE DC current gain IC = 30 mA; VCE = 5 V 50
fT transition frequency IC = 30 mA; VCE = 5 V; 4 GHz
f = 500 MHz; Tamb = 25 C
Cc collector capacitance IE = ie = 0; VCB = 5 V; 1.2 pF
f = 1 MHz
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; 1.4 pF
f = 1 MHz
Cre feedback capacitance IC = 0; VCE = 5 V; 1 pF
f = 1 MHz
GUM maximum unilateral power IC = 30 mA; VCE = 5 V; 15.5 dB
gain; note 1 f = 500 MHz; Tamb = 25 C
IC = 30 mA; VCE = 5 V; 10 dB
f = 1 GHz; Tamb = 25 C
F noise figure s = opt; IC = 10 mA; 2.4 dB
VCE = 5 V; f = 500 MHz
s = opt; IC = 10 mA; 3 dB
VCE = 5 V; f = 1 GHz
Note
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------- dB.
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