Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors Philips bft92w
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download bft92w documenatation <<
Text preview - extract from the document
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT92W
PNP 4 GHz wideband transistor
Product specification May 1994
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
FEATURES DESCRIPTION
High power gain Silicon PNP transistor in a plastic,
Gold metallization ensures SOT323 (S-mini) package. The handbook, 2 columns 3
excellent reliability BFT92W uses the same crystal as the
SOT23 version, BFT92.
SOT323 (S-mini) package.
PINNING 1 2
APPLICATION
PIN DESCRIPTION Top view MBC870
It is intended as a general purpose
transistor for wideband applications 1 base
Marking code: W1.
up to 2 GHz. 2 emitter
Fig.1 SOT323.
3 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
IC collector current (DC) 35 mA
Ptot total power dissipation up to Ts = 93 C; note 1 300 mW
hFE DC current gain IC = 15 mA; VCE = 10 V 20 50
Cre feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz 0.5 pF
fT transition frequency IC = 15 mA; VCE = 10 V; 4 GHz
f = 500 MHz
GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; 17 dB
f = 500 MHz; Tamb = 25 C
F noise figure IC = 5 mA; VCE = 10 V; 2.5 dB
f = 500 MHz
Tj junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the collector pin.
May 1994 2
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2 V
IC collector current (DC) 25 mA
Ptot total power dissipation up to Ts = 93 C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point up to Ts = 93 C; note 1 190 K/W
Note to the "Limiting values" and "Thermal characteristics"
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 10 V 50 nA
hFE DC current gain IC = 15 mA; VCE = 10 V 20 50
fT transition frequency IC = 15 mA; VCE = 10 V; 4 GHz
f = 500 MHz; Tamb = 25 C
Cc collector capacitance IE = ie = 0; VCB = 10 V; 0.65 pF
f = 1 MHz
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; 0.75 pF
f = 1 MHz
Cre feedback capacitance IC = 0; VCB = 10 V; 0.5 pF
f = 1 MHz
GUM maximum unilateral power gain; IC = 15 mA; VCE = 10 V; 17 dB
note 1 f = 500 MHz; Tamb = 25 C
IC = 15 mA; VCE = 10 V; 11 dB
f = 1 GHz; Tamb = 25 C
F noise figure s = opt; IC = 5 mA; 2.5 dB
VCE = 10 V; f = 500 MHz
s = opt; IC = 5 mA; 3 dB
VCE = 10 V; f = 1 GHz
Note
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------- dB.
1 ◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo