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                 BFU610F
                 NPN wideband silicon RF transistor
                 Rev. 2 -- 11 January 2011                                              Product data sheet




1. Product profile

          1.1 General description
              NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
              dual-emitter SOT343F package.

CAUTION
                   This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
                   electrostatic sensitive devices.
                   Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
                   equivalent standards.


          1.2 Features and benefits
                 Low noise high gain microwave transistor
                 Noise figure (NF) = 1.7 dB at 5.8 GHz
                 High associated gain 13.5 dB at 5.8 GHz
                 40 GHz fT silicon technology

          1.3 Applications
                 Low current battery equipped applications
                 Low noise amplifiers for microwave communications systems
                 Analog/digital cordless applications
                 RKE
                 AMR
                 GPS
                 ZigBee
                 LTE, cellular, UMTS
                 FM radio
                 Mobile TV
                 Bluetooth
NXP Semiconductors                                                                                                                                  BFU610F
                                                                                                                        NPN wideband silicon RF transistor


                     1.4 Quick reference data
                         Table 1.       Quick reference data
                         Symbol Parameter                                           Conditions                                            Min   Typ           Max             Unit
                         VCBO          collector-base voltage                       open emitter                                          -     -             16              V
                         VCEO          collector-emitter voltage                    open base                                             -     -             5.5             V
                         VEBO          emitter-base voltage                         open collector                                        -     -             2.5             V
                         IC            collector current                                                                                  -     2             10              mA
                         Ptot          total power dissipation                      Tsp  90 

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