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                           BLA0912-250
                           Avionics LDMOS transistor
                           Rev. 3 -- 26 November 2010                                               Product data sheet




1. Product profile

                 1.1 General description
                         Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead
                         SOT502A flange package with a ceramic cap. The common source is connected to the
                         mounting flange.

Table 1.    Test information
Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz
frequency band. Th = 25 

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