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BLF573; BLF573S
HF / VHF power LDMOS transistor
Rev. 3 -- 8 July 2010 Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.
Table 1. Production test information
Mode of operation f VDS PL Gp D
(MHz) (V) (W) (dB) (%)
CW 225 50 300 27.2 70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 900 mA:
Average output power = 300 W
Power gain = 27.2 dB
Efficiency = 70 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF and VHF band)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
NXP Semiconductors BLF573; BLF573S
HF / VHF power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF573 (SOT502A)
1 drain
1 1
2 gate
3
3 source [1]
2 2
3
sym112
BLF573S (SOT502B)
1 drain
1 1
2 gate
3
3 source [1]
2 2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF573 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
BLF573S - earless flanged LDMOST ceramic package, 2 leads SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage -0.5 +11 V
ID drain current - 42 A
Tstg storage temperature -65 +150 ◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo