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                 BLF574
                 HF / VHF power LDMOS transistor
                 Rev. 02 -- 24 February 2009                                           Product data sheet




1. Product profile

          1.1 General description
              A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial
              applications in the HF to 500 MHz band.

              Table 1.   Application information
              Mode of operation                        f              VDS        PL        Gp          D
                                                       (MHz)          (V)        (W)       (dB)        (%)
              CW                                       225            50         500       26.5        70
                                                       108            50         600       27.5        73


CAUTION
                   This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                   during transport and handling.




          1.2 Features
              I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq
                of 1000 mA:
                 N Average output power = 500 W
                 N Power gain = 26.5 dB
                 N Efficiency = 70 %
              I Easy power control
              I Integrated ESD protection
              I Excellent ruggedness
              I High efficiency
              I Excellent thermal stability
              I Designed for broadband operation (10 MHz to 500 MHz)
              I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
                (RoHS)

          1.3 Applications
              I Industrial, scientific and medical applications
              I Broadcast transmitter applications
NXP Semiconductors                                                                                                    BLF574
                                                                                          HF / VHF power LDMOS transistor



2. Pinning information
                     Table 2.       Pinning
                     Pin                Description                                    Simplified outline     Graphic symbol
                     1                  drain1
                                                                                             1    2                               1
                     2                  drain2
                                                                                                        5
                     3                  gate1
                                                                                                                       3
                     4                  gate2                                                3    4                                        5
                                                                                                                       4
                     5                  source                                   [1]


                                                                                                                                  2
                                                                                                                                   sym117


                     [1]    Connected to flange.


3. Ordering information
                     Table 3.       Ordering information
                     Type number            Package
                                            Name       Description                                                               Version
                     BLF574                 -          flanged balanced LDMOST ceramic package;                                  SOT539A
                                                       2 mounting holes; 4 leads


4. Limiting values
                     Table 4.   Limiting values
                     In accordance with the Absolute Maximum Rating System (IEC 60134).
                     Symbol          Parameter                          Conditions                            Min            Max            Unit
                     VDS             drain-source voltage                                                     -              110            V
                     VGS             gate-source voltage                                                      -0.5           +11            V
                     ID              drain current                                                            -              56             A
                     Tstg            storage temperature                                                      -65            +150           



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