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                 BLF578
                 Power LDMOS transistor
                 Rev. 02 -- 4 February 2010                                             Product data sheet




1. Product profile

          1.1 General description
              A 1200 W LDMOS power transistor for broadcast applications and industrial applications
              in the HF to 500 MHz band.

              Table 1.    Application information
              Mode of operation                       f              VDS       PL           Gp         D
                                                      (MHz)          (V)       (W)          (dB)       (%)
              CW                                      108            50        1000         26         75
              pulsed RF                               225            50        1200         24         71


CAUTION
                   This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                   during transport and handling.




          1.2 Features
                 Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
                 IDq of 40 mA, a tp of 100 s with  of 20 %:
                     Output power = 1200 W
                     Power gain = 24 dB
                     Efficiency = 71 %
                 Easy power control
                 Integrated ESD protection
                 Excellent ruggedness
                 High efficiency
                 Excellent thermal stability
                 Designed for broadband operation (10 MHz to 500 MHz)
                 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
                 (RoHS)

          1.3 Applications
                 Industrial, scientific and medical applications
                 Broadcast transmitter applications
NXP Semiconductors                                                                                                 BLF578
                                                                                                     Power LDMOS transistor



2. Pinning information
                     Table 2.       Pinning
                     Pin               Description                                    Simplified outline   Graphic symbol
                     1                 drain1
                                                                                            1    2                             1
                     2                 drain2
                                                                                                       5
                     3                 gate1
                                                                                                                    3
                     4                 gate2                                                3    4                                      5
                                                                                                                    4
                     5                 source                                   [1]


                                                                                                                               2
                                                                                                                                sym117


                     [1]    Connected to flange.


3. Ordering information
                     Table 3.       Ordering information
                     Type number           Package
                                           Name        Description                                                            Version
                     BLF578                -           flanged balanced LDMOST ceramic package;                               SOT539A
                                                       2 mounting holes; 4 leads


4. Limiting values
                     Table 4.   Limiting values
                     In accordance with the Absolute Maximum Rating System (IEC 60134).
                     Symbol          Parameter                      Conditions                             Min            Max            Unit
                     VDS             drain-source voltage                                                  -              110            V
                     VGS             gate-source voltage                                                   -0.5           +11            V
                     ID              drain current                                                         -              88             A
                     Tstg            storage temperature                                                   -65            +150           

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