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BLF7G15LS-200
Power LDMOS transistor
Rev. 2 -- 1 March 2011 Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation f IDq VDS PL(AV) Gp D ACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 1476 to 1511 1600 28 50 19.5 29 35[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1450 MHz to 1550 MHz frequency range
NXP Semiconductors BLF7G15LS-200
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 drain
1 1
2 gate
3
3 source [1]
2 2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF7G15LS-200 - earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
ID drain current - 56 A
Tstg storage temperature 65 +150 C
Tj junction temperature - 200 C
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 50 W; 0.30 K/W
VDS = 28 V; IDq = 1600 mA
6. Characteristics
Table 6. Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA 65 67 - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 A
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