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BLF7G27L-75P;
BLF7G27LS-75P
Power LDMOS transistor
Rev. 2 -- 14 July 2010 Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation f IDq VDS PL(AV) Gp D ACPR885k
(MHz) (mA) (V) (W) (dB) (%) (dBc)
IS-95 2300 to 2400 650 28 12 17 26 46[1]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (2300 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2300 MHz to 2700 MHz frequency range
NXP Semiconductors BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF7G27L-75P (SOT1121A)
1 drain1
1 2 1
2 drain2
3 gate1
3
4 gate2 5
5 4
5 source [1]
3 4
2
sym117
BLF7G27LS-75P (SOT1121B)
1 drain1
1 2 1
2 drain2
3 gate1 5 3
4 gate2 5
4
5 source [1] 3 4
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF7G27L-75P - flanged LDMOST ceramic package; 2 mounting holes; SOT1121A
4 leads
BLF7G27LS-75P - earless flanged LDMOST ceramic package; 4 leads SOT1121B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
ID drain current - 18 A
Tstg storage temperature 65 +150 C
Tj junction temperature - 225 C
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