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BLF7G20L-250P;
BLF7G20LS-250P
Power LDMOS transistor
Rev. 3 -- 1 March 2011 Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1880 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation f IDq VDS PL(AV) Gp D ACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 1805 to 1880 1900 28 70 18 35 29.5[1]
[1] Test signal: 3GPP; test model 1;64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High-efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1805 MHz to 1880 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
1805 MHz to 1880 MHz frequency range
NXP Semiconductors BLF7G20L-250P; BLF7G20LS-250P
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF7G20L-250P (SOT539A)
1 drain1
1 2 1
2 drain2
5
3 gate1
3
4 gate2 3 4 5
4
5 source [1]
2
sym117
BLF7G20LS-250P (SOT539B)
1 drain1
1
2 drain2 1 2
3 gate1 5
3
4 gate2 3 4 5
4
5 source [1]
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF7G20L-250P - flanged balanced LDMOST ceramic package; SOT539A
2 mounting holes; 4 leads
BLF7G20LS-250P - earless flanged balanced LDMOST ceramic package; SOT539B
4 leads
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
ID drain current - 65 A
Tstg storage temperature 65 +150 C
Tj junction temperature - 200 C
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