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UHF power LDMOS transistor
Rev. 01 -- 20 February 2006 Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 250 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2
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