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blf881_blf881s


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                    BLF881; BLF881S
                    UHF power LDMOS transistor
                    Rev. 3 -- 7 December 2010                                                 Product data sheet




1. Product profile

          1.1 General description
              A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
              applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
              ruggedness and broadband performance of this device makes it ideal for digital
              transmitter applications.

              Table 1.   Typical performance
              RF performance at VDS = 50 V in a common-source 860 MHz test circuit.
              Mode of operation         f                       PL    PL(PEP)   PL(AV) Gp     D    IMD3   IMDshldr
                                        (MHz)                   (W) (W)         (W)      (dB) (%) (dBc)   (dBc)
              2-tone, class AB          f1 = 860; f2 = 860.1    -     140       -        21   49   -34    -
              DVB-T (8k OFDM)           858                     -     -         33       21   34   -      -33[1]

              [1]   Measured [dBc] with delta marker at 4.3 MHz from center frequency.



CAUTION
                     This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                     during transport and handling.




          1.2 Features and benefits
                    2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
                    drain current IDq = 0.5 A:
                        Peak envelope power load power = 140 W
                        Power gain = 21 dB
                        Drain efficiency = 49 %
                        Third order intermodulation distortion = -34 dBc
                    DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
                    drain current IDq = 0.5 A:
                        Average output power = 33 W
                        Power gain = 21 dB
                        Drain efficiency = 34 %
                        Shoulder distance = -33 dBc (4.3 MHz from center frequency)
                    Integrated ESD protection
                    Excellent ruggedness
                    High power gain
NXP Semiconductors                                                                                                      BLF881; BLF881S
                                                                                                                             UHF power LDMOS transistor


                               High efficiency
                               Excellent reliability
                               Easy power control
                               Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
                               (RoHS)

                     1.3 Applications
                               Communication transmitter applications in the UHF band
                               Industrial applications in the UHF band


2. Pinning information
                         Table 2.      Pinning
                         Pin              Description                                                               Simplified outline   Graphic symbol
                         BLF881 (SOT467C)
                         1                drain
                                                                                                                                                              1
                         2                gate
                         3                source                                                      [1]
                                                                                                                                                     2
                                                                                                                                                              3
                                                                                                                                                      sym112


                         BLF881S (SOT467B)
                         1                drain
                                                                                                                            1                                 1
                         2                gate
                         3                source                                                      [1]
                                                                                                                                  3
                                                                                                                                                     2
                                                                                                                                                              3
                                                                                                                            2                         sym112


                         [1]   Connected to flange.


3. Ordering information
                         Table 3.      Ordering information
                         Type number Package
                                           Name Description                                                                                                Version
                         BLF881            -               flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
                         BLF881S           -               earless LDMOST ceramic package; 2 leads                                                         SOT467B




BLF881_BLF881S                                 All information provided in this document is subject to legal disclaimers.                 



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