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BLL6H0514L-130;
BLL6H0514LS-130
LDMOS driver transistor
Rev. 2 -- 13 September 2010 Product data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Table 1. Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation f tp VDS PL Gp RLin D Pdroop(pulse) tr tf
(MHz) (s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) (ns)
pulsed RF 960 to 1215 128 10 50 130 19 10 54 0 15 8
1200 to 1400 300 10 50 130 17 10 50 0 15 8
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLL6H0514L-130 (SOT1135A)
1 drain
1 1
2 gate
3 source [1]
2
3
3 sym112
2
BLL6H0514LS-130 (SOT1135B)
1 drain
1 1
2 gate
3 source [1]
2
3
sym112
3
2
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLL6H0514L-130 - flanged ceramic package; 2 mounting holes; 2 leads SOT1135A
BLL6H0514LS-130 - earless flanged ceramic package; 2 leads SOT1135B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 100 V
VGS gate-source voltage 0.5 +13 V
ID drain current - 18 A
Tstg storage temperature 65 +150 C
Tj junction temperature - 200 C
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