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BLL6H1214L-250;
BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 3 -- 14 July 2010 Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation f VDS PL Gp D tr tf
(GHz) (V) (W) (dB) (%) (ns) (ns)
pulsed RF 1.2 to 1.4 50 250 17 55 15 5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an IDq of 100 mA, a tp of 300 s with of 10 %:
Output power = 250 W
Power gain = 17 dB
Efficiency = 55 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
NXP Semiconductors BLL6H1214L(S)-250
LDMOS L-band radar power transistor
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLL6H1214L-250 (SOT502A)
1 drain
1
2 gate 1
3 source [1] 3
2
2
3
sym112
BLL6H1214LS-250 (SOT502B)
1 drain
1
2 gate 1
3 source [1] 3
2
2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLL6H1214L-250 - flanged LDMOST ceramic package; 2 mounting SOT502A
holes; 2 leads
BLL6H1214LS-250 - earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 100 V
VGS gate-source voltage 0.5 +13 V
ID drain current - 42 A
Tstg storage temperature 65 +150 C
Tj junction temperature - 200 C
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