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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BLV10
  VHF power transistor
Product specification                             August 1986
Philips Semiconductors                                                                                    Product specification


  VHF power transistor                                                                                             BLV10

DESCRIPTION                                  It has a 3/8" flange envelope with a
                                             ceramic cap. All leads are isolated
N-P-N silicon planar epitaxial
                                             from the flange.
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.



QUICK REFERENCE DATA
R.F. performance up to Th = 25 

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