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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BLW60C
  VHF power transistor
Product specification                             March 1993
Philips Semiconductors                                                                                      Product specification


  VHF power transistor                                                                                                 BLW60C

DESCRIPTION                                      Matched hFE groups are available on
                                                 request.
N-P-N silicon planar epitaxial
transistor intended for use in class-A,          It has a 3/8" capstan envelope with a
B and C operated mobile, industrial              ceramic cap. All leads are isolated
and military transmitters with a                 from the stud.
nominal supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.




QUICK REFERENCE DATA
R.F. performance up to Th = 25 

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