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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BLW77
  HF/VHF power transistor
Product specification                             August 1986
Philips Semiconductors                                                                              Product specification


  HF/VHF power transistor                                                                                        BLW77

DESCRIPTION                                mismatch conditions. Transistors are
                                           delivered in matched hFE groups.
N-P-N silicon planar epitaxial
transistor intended for use in class-AB    The transistor has a 1/2" flange
or class-B operated high power             envelope with a ceramic cap. All
transmitters in the h.f. and v.h.f.        leads are isolated from the flange.
bands. The transistor presents
excellent performance as a linear
amplifier in the h.f. band. It is
resistance stabilized and is
guaranteed to withstand severe load




QUICK REFERENCE DATA
R.F. performance up to Th = 25 

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