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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BLW80
  UHF power transistor
Product specification                             March 1993
Philips Semiconductors                                                                             Product specification


  UHF power transistor                                                                                        BLW80

DESCRIPTION                                   The transistor is housed in a 1/4"
                                              capstan envelope with a ceramic cap.
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.



QUICK REFERENCE DATA
R.F. performance up to Th = 25 

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