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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW83
HF/VHF power transistor
Product specification August 1986
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
DESCRIPTION Matched hFE groups are available on
request.
N-P-N silicon planar epitaxial
transistor for use in transmitting It has a 3/8" flange envelope with a
amplifiers operating in the h.f. and ceramic cap. All leads are isolated
v.h.f. bands, with a nominal supply from the flange.
voltage of 28 V. The transistor is
specified for s.s.b. applications as
linear amplifier in class-A and AB.
The device is resistance stabilized
and is guaranteed to withstand
severe load mismatch conditions.
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION VCE f PL Gp dt IC d3 Th
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