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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BLW90
  UHF power transistor
Product specification                             August 1986
Philips Semiconductors                                                                              Product specification


  UHF power transistor                                                                                      BLW90

DESCRIPTION                                  The transistor is housed in a 1/4"
                                             capstan envelope with a ceramic cap.
N-P-N silicon planar epitaxial
                                             All leads are isolated from the stud.
transistor suitable for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal
supply voltage of 28 V. The transistor
is resistance stabilized and is
guaranteed to withstand infinite
VSWR at rated output power. High
reliability is ensured by a gold
sandwich metallization.


QUICK REFERENCE DATA
R.F. performance up to Th = 25 

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