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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BLW97
  HF power transistor
Product specification                             August 1986
Philips Semiconductors                                                                                Product specification


  HF power transistor                                                                                           BLW97

DESCRIPTION                                severe load-mismatch conditions. All
                                           leads are isolated from the flange.
N-P-N silicon planar epitaxial
transistor designed for use in class-A,    The transistors are supplied in
AB and B operated high-power               matched hFE groups.
industrial and military transmitting
equipment in the h.f. band.
The transistor offers excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is made to withstand



QUICK REFERENCE DATA
R.F. performance up to Th = 25 

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