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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BLW29
  VHF power transistor
Product specification                             August 1986
 Philips Semiconductors                                                                                        Product specification


    VHF power transistor                                                                                               BLW29

 DESCRIPTION                                       the chain can deliver 15 W with a
                                                   maximum drive power of 120 mW at
 N-P-N silicon planar epitaxial
                                                   175 MHz. The transistor is resistance
 transistor intended for use in class-A,
                                                   stabilized and is guaranteed to
 B or C operated mobile transmitters
                                                   withstand severe load mismatch
 with a nominal supply voltage of
                                                   conditions with a supply over-voltage
 13,5 V. Because of the high gain and
                                                   to 16,5 V.
 excellent power handling capability,
 the transistor is especially suited for           It has a 3/8" capstan envelope with a
 design of wide-band and                           ceramic cap. All leads are isolated
 semi-wide-band v.h.f. amplifiers.                 from the stud.
 Together with a BFQ42 driver stage,


 QUICK REFERENCE DATA
 R.F. performance up to Th = 25 

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