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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BLW33
  UHF linear power transistor
Product specification                             August 1986
Philips Semiconductors                                                                                    Product specification


  UHF linear power transistor                                                                                         BLW33

DESCRIPTION                                  area. The combination of optimum
                                             thermal design and the application of
N-P-N silicon planar epitaxial
                                             gold sandwich metallization
transistor primarily intended for use in
                                             realizes excellent reliability
linear u.h.f. amplifiers for television
                                             properties.
transmitters and transposers. The
excellent d.c. dissipation                   The transistor has a 1/4" capstan
properties for class-A operation are         envelope with ceramic cap.
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal


QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION                            fvision           VCE       IC          Th     dim (1)     Po sync (1)           Gp
                                              MHz               V        mA          

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