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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BSN254
  BSN254A
  N-channel enhancement mode
  vertical D-MOS transistors
Product specification                         April 1995
File under Discrete Semiconductors, SC13b
Philips Semiconductors                                                                                            Product specification

  N-channel enhancement mode vertical                                                                                  BSN254
  D-MOS transistors                                                                                                   BSN254A

DESCRIPTION                                            QUICK REFERENCE DATA
N-channel enhancement mode                                 Drain-source voltage                         VDS          max.    250 V
vertical D-MOS transistors in TO-92                        Drain current (DC)                           ID           max.    300 mA
variant envelope and designed for
                                                           Total power dissipation up to Tamb = 25 

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