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                                      BSH112
                                      N-channel enhancement mode field-effect transistor
                         M3D088
                                      Rev. 01 -- 25 August 2000                                   Product specification




1. Description
                                  N-channel enhancement mode field-effect transistor in a plastic package using
                                  TrenchMOSTM1 technology.

                                  Product availability:
                                      BSH112 in SOT23.


2. Features
                                  s    TrenchMOSTM technology
                                  s    Very fast switching
                                  s    Logic level compatible
                                  s    Subminiature surface mount package
                                  s    Gate-source ESD protection diodes.


3. Applications

                         c
                                  s Relay driver
                     c

                                  s High speed line driver
                                  s Logic level translator.


4. Pinning information
Table 1:    Pinning - SOT23, simplified outline and symbol
 Pin             Description                              Simplified outline          Symbol
 1               gate (g)
                                                                    3
                                                                                                       d
 2               source (s)
 3               drain (d)
                                                                                                 g


                                                                             03ab44
                                                                                                           03ab60
                                                                                                       s
                                                               1         2

                                                                   SOT23                       N-channel MOSFET


1.   TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors                                                                                             BSH112
                                                                     N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2:         Quick reference data
Symbol Parameter                                       Conditions                             Typ                Max                Unit
VDS              drain-source voltage (DC)             Tj = 25 to 150 

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