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                                     BSH120T
                                     N-channel enhancement mode field-effect transistor
                                     Rev. 01 -- 06 September 2000                              Product specification

                   M3D186




1. Description
                                 N-channel enhancement mode field-effect transistor in a plastic package using
                                 TrenchMOSTM1 technology.

                                 Product availability:
                                     BSH120T in SOT54 (TO-92).


2. Features
                                 s    TrenchMOSTM technology
                                 s    Low on-state resistance
                                 s    Very fast switching
                                 s    Logic level compatible.


3. Applications
                                 s Relay drivers
                            c
                                 s DC to DC converters
                      c

                                 s Logic level translators.


4. Pinning information
Table 1:    Pinning - SOT54, simplified outline and symbol
 Pin              Description                                 Simplified outline    Symbol
 1                source (s)
                                                                                                      d
 2                drain (d)
 3                gate (g)
                                                                                                g
                                                                           03ab40
                                                                    3 21
                                                                                             MBB076   s

                                                                SOT54 (TO-92)




1.   TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors                                                                                      BSH120T
                                                                    N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2:         Quick reference data
Symbol Parameter                                     Conditions                                      Typ               Max                Unit
VDS              drain-source voltage (DC)           Tj = 25 to 150 

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