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                                     BSH121
                                     N-channel enhancement mode field-effect transistor
                                     Rev. 01 -- 14 August 2000                                       Product specification




1. Description
                                 N-channel enhancement mode field-effect transistor in a plastic package using
                                 TrenchMOSTM1 technology.

                                 Product availability:
                                     BSH121 in SOT323.


2. Features
                                 s    TrenchMOSTM technology
                                 s    Very fast switching
                                 s    Low threshold voltage
                                 s    Subminiature surface mount package.


3. Applications
                                 s Battery management
                         c
                                 s High speed switch
                     c

                                 s Logic level translator.


4. Pinning information
Table 1:    Pinning - SOT323, simplified outline and symbol
 Pin               Description                       Simplified outline               Symbol
 1                 gate (g)
                                                                         3                               d
 2                 source (s)
 3                 drain (d)
                                                                                                 g

                                                                     1         2
                                                                                                             03ab30
                                                                                                         s
                                                          Top view           MBC870

                                                               SOT323                          N-channel MOSFET




1.   TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors                                                                                             BSH121
                                                                     N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2:         Quick reference data
Symbol Parameter                                       Conditions                             Typ                Max                Unit
VDS              drain-source voltage (DC)             Tj = 25 to 150 

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