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                                     BSP030
                                     N-channel enhancement mode field-effect transistor
                                     Rev. 04 -- 26 July 2000                                          Product specification




1. Description
                                 N-channel enhancement mode field-effect transistor in a plastic package using
                                 TrenchMOSTM1 technology.

                                 Product availability:
                                     BSP030 in SOT223.


2. Features
                                 s    TrenchMOSTM technology
                                 s    Fast switching
                                 s    Low on-state resistance
                                 s    Logic level compatible
                                 s    Surface mount package.


3. Applications

                         c
                                 s Motor and actuator driver
                     c

                                 s Battery management
                                 s High speed, low resistance switch.


4. Pinning information
Table 1:    Pinning - SOT223, simplified outline and symbol
 Pin             Description                              Simplified outline           Symbol
 1               gate (g)
                                                                 4                                         d
 2               drain (d)
 3               source (s)
                                                                                                  g
 4               drain (d)
                                                                              03ab45
                                                                                                               03ab30
                                                                1     2   3                                s

                                                                     SOT223                     N-channel MOSFET


1.   TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors                                                                                              BSP030
                                                                     N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2:         Quick reference data
Symbol Parameter                                       Conditions                             Typ                Max                Unit
VDS              drain-source voltage (DC)             Tj = 25 to 150 

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