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bsp120


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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BSP120
  N-channel enhancement mode
  vertical D-MOS transistor
Product specification                         April 1995
File under Discrete Semiconductors, SC13b
Philips Semiconductors                                                                               Product specification

  N-channel enhancement mode vertical
                                                                                                            BSP120
  D-MOS transistor

DESCRIPTION                                  QUICK REFERENCE DATA
N-channel enhancement mode                    Drain-source voltage                  VDS       max.     200 V
vertical D-MOS transistor in a                Drain-current (DC)                    ID        max.     250 mA
miniature SOT223 envelope and
                                              Drain-source ON-resistance
designed for use as a line current                                                            typ.       7 
interrupter in telephone sets and for                ID = 250 mA; VGS = 10 V        RDS(on)
                                                                                              max.      12 
application in relay, high-speed and
line-transformer drivers.                     Gate threshold voltage                VGS(th)   max.      2.8 V

FEATURES                                     PINNING - SOT223



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