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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BS170
  N-channel vertical D-MOS
  transistor
Product specification                         April 1995
File under Discrete Semiconductors, SC13b
Philips Semiconductors                                                                                          Product specification


  N-channel vertical D-MOS transistor                                                                                    BS170

DESCRIPTION                                          QUICK REFERENCE DATA
N-channel enhancement mode                               Drain-source voltage                         VDS        max.       60 V
vertical D-MOS transistor in TO-92                       Gate-source voltage                          VGS        max.       15 V
variant envelope and intended for use
                                                         Drain current (DC)                           ID         max.     500 mA
in relay, high-speed and
line-transformer drivers.                                Total power dissipation up to Tamb = 25 

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