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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BU4508AF
  Silicon Diffused Power Transistor
Product specification                         June 1998
Supersedes data of January 1998
File under Discrete Semiconductors, SC06
Philips Semiconductors                                                                              Product specification


  Silicon Diffused Power Transistor                                                                       BU4508AF


GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.

QUICK REFERENCE DATA
 SYMBOL          PARAMETER                                      CONDITIONS                         TYP.    MAX.     UNIT
 VCESM           Collector-emitter voltage peak value           VBE = 0 V                            -     1500       V
 VCEO            Collector-emitter voltage (open base)                                               -      800       V
 IC              Collector current (DC)                                                              -       8        A
 ICM             Collector current peak value                                                        -      15        A
 Ptot            Total power dissipation                        Ths  25 

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