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Philips Semiconductors                                                                           Product specification

Silicon Diffused Power Transistor                                                                       BU508AW


GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection
circuits of colour television receivers.

QUICK REFERENCE DATA
 SYMBOL          PARAMETER                                   CONDITIONS                          TYP.   MAX.      UNIT
 VCESM           Collector-emitter voltage peak value        VBE = 0 V                            -     1500       V
 VCEO            Collector-emitter voltage (open base)                                            -      700       V
 IC              Collector current (DC)                                                           -       8        A
 ICM             Collector current peak value                                                     -      15        A
 Ptot            Total power dissipation                     Tmb  25 

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