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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1200 V VCBO Collector-Base voltage (open emitter) - 1200 V VCEO Collector-emitter voltage (open base) - 550 V IC Collector current (DC) - 6 A ICM Collector current peak value - 10 A Ptot Total power dissipation Tmb 25
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